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Aluminum Nitride Ceramics

Aluminum nitride (AlN) ceramics have excellent comprehensive properties and are a new generation of advanced ceramics that have received widespread attention in recent years.
Quantity:
  • FOTMA
  • >3.1g/cm3
  • >300Mpa
  • >99
Aluminum Nitride  Ceramics

Introduction of aluminum nitride ceramic:
  Aluminum nitride (AlN) ceramics have excellent comprehensive properties and are a new generation of advanced ceramics that have received widespread attention in recent years. They have broad application prospects in many aspects. Very suitable for semiconductor substrates and structural packaging materials. The application potential in the electronics industry is huge. In addition, aluminum nitride is also resistant to high temperature and corrosion, and is not infiltrated by a variety of molten metals and molten salts. Therefore, it can be used as high-grade refractory materials and crucible materials as well as anti-corrosion coatings, such as corrosive materials containers and processor linings, etc. The powder can also be added as additives to various metals or non-metals to improve these Material properties, high-purity aluminum nitride ceramics are transparent and can be used as electronic optical devices. They also have excellent wear resistance and can be used as abrasive materials and wear-resistant parts.
  Due to its excellent thermal, electrical and mechanical properties, aluminum nitride ceramics have attracted widespread attention from researchers at home and abroad. With the rapid development of modern science and technology, higher requirements are put forward on the performance of the materials used. Aluminum nitride ceramics will also be more widely used in many fields.
氮化铝陶瓷.2

The main technical indicators of the product:
Purity % 99
Density g/cm3 3.1
Thermal conductivity w/(m*k) 120
Thermal expansion coefficient 10^-6K 4.4
Maximum use temperature 1800
Bending strength Mpa 300
Volume resistivity Ω*cm 1014
Dielectric strength kV/mm 15
Purity % 99
Density g/cm3 3.1
Thermal conductivity w/(m*k) 120
Thermal expansion coefficient 10^-6K 4.4
Maximum use temperature 1800
Bending strength Mpa 300
Volume resistivity Ω*cm 1014
Dielectric strength kV/mm 15

Product features and advantages:
  High thermal conductivity
  Expansion coefficient can be matched with semiconductor silicon wafer
  With high insulation resistance and withstand voltage strength
  Low dielectric constant, low dielectric loss
  High mechanical strength
  Suitable for casting process
  Typical market application
  Applied to crucible for compound semiconductor single crystal growth
  Substrates for high-frequency surface acoustic wave devices
  High-purity aluminum nitride film shooting target
  Infrared and microwave window materials
 
氮化铝陶瓷.4
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