You are here: Home » Related Searches » Industry News » Cobalt/Molybdenum Disulfide Heterostructure for Next-Gen Semiconductors

Cobalt/Molybdenum Disulfide Heterostructure for Next-Gen Semiconductors

Views: 6     Author: Site Editor     Publish Time: 2020-07-29      Origin: Site

The international research team conducted characteristic research and analysis of the "cobalt/molybdenum disulfide heterostructure" and found that this new material combination is expected to lead semiconductors to break through the physical limits and become a potential new star to replace traditional semiconductor materials such as silicon.

As the semiconductor process moves towards 3 nanometers, how to overcome the physical limit of transistor scaling has become a key technology for the active development of the semiconductor industry. Two-dimensional materials (2D materials) with only atomic thickness, such as Graphene and MoS2 (MoS2), are considered to have the potential to replace traditional semiconductor materials such as silicon.

The National Synchrotron Radiation Research Center (National Synchrotron Radiation Center) issued a press release today. The international research team led by researcher Wei Dexin of the National Synchrotron Radiation Center used the "Taiwan Light Source" (TLS) and the Italian synchrotron radiation source (Elettra ), the characteristic analysis of the "cobalt/molybdenum disulfide heterostructure" found that at room temperature, the interaction between the heterostructures can still induce the "spontaneous structure" in the amorphous phase of the magnetic material. "Magnetic anisotropy" opens up new horizons for the origin and manipulation of magnetic anisotropy.

The National Spoke Center stated that the research results were published on the top international journal Nanoscale Horizons on July 1, and were selected as the inside cover page of the journal.

Guofu Center pointed out that magnetic anisotropy refers to the characteristic that the magnetization direction of magnetic materials is easily aligned in a specific direction, and can be used to define 0 and 1 in digital records. How to use the preparation of new materials or artificial structures to discover new magnetic anisotropy and control its direction is an important key to the development of magnetic storage and magnetic induction technology, including magnetoresistive random access memory (MRAM), mobile phone electronics Both compasses and gyroscopes use the characteristics of electron spin. Compared with traditional electronic components, spintronic components can provide higher energy efficiency and lower power consumption, and are also predicted to be the mainstream components of the next generation.

Wei Dexin said that the research has discovered for the first time that another cause of magnetic anisotropy, "Orbital hybridization" (Orbital hybridization), the team will further explore the key mechanism of this phenomenon in the future, and further study new methods to manipulate the direction of the spintronic sector. , Has the opportunity to bring breakthrough development to the semiconductor industry and optoelectronic industries.

We have an excellent technical team, our products in quality and quantity will make you satisfied, welcome to buy
  • +86-13995656368
  • Mon-Fri: 09:00AM - 06:00PM
  • Guanggu Avenue 52#, Hongshan, Wuhan, Hubei province, P.R.China. 430074
Contact us NOW
Incorrect E-mail
Follow Us
Copyright ©2022 Hubei Fotma Machinery Co., Ltd.